Scientific Co-workers (PhD Student Positions):
Kassel Firma/Institution
University of Kassel Land Germany
Position:
PhD Position eingegangen am:05/11/2007 At the Technological Physics group of the Institute of Nanostructure Technologies and Analytics (INA) of the University of Kassel, Germany, there are three Ph.D. positions open on topics related to self-assembled growth of III-V quantum dot structures (nanomaterials) and optoelectronic device development based on nanostructure processing (nanophotonics) .
The resources at INA include 400 sqm clean room facilities with semiconductor process technology and about 400 sqm additional laboratory space. For the above mentioned topics a double chamber molecular beam epitaxy (Veeco Gen II) is available. One chamber is currently dedicated for GaAs based and the other for InP-based expitaxy, respectively. A new ICP reactive ion etcher will be installed beginning of next year.
There is access to electron beam lithography and dry/wet etch technology including PECVD, RIE, IBD systems as well as to characterization tools (SEM, AFM, STM, XRD, ellipsometry etc.).
For optical material characterization there is access to low-temperature PL and transmission measurements as well as to device charaterization set-ups. 1 Ph.D. position (position number 9164) for III/V epitaxy mainly focussing on self-assembly techniques of InAs quantum dots on materials lattice matched to InP. The major goal here is to investigate and optimise the formation process and optical properties of quantum dots emitting in the wavelength range of 1.55 µm.
These nanoscaled structures should be also applied to optolectronic devices, like lasers or amplifiers, with very unique properties. 1 Ph.D. position (position number 9174) for III/V epitaxy mainly focussing on self-assembly techniques of III-V quantum dots on silicon. Here, basic growth studies should be performed to establish a fabrication technology for efficient light emitting material on silicon.
For this purpose, also silicon process technology can be applied, e.g., for pre-patterning of surfaces, etc. The growth should be performed in an InP growth chamber where an additional Si source will be installed. 1 Ph.D. position (position number 9175) for the development of new optoelectronic devices based on nanostructured semiconductors.
Beside device characterization, this includes also the development of etching processes to realise high aspect ratio III/V nanostructures for new nanophotonic devices, e.g., ultra high-speed multi-section quantum dot lasers or single photon emitters. For this purpose a new ICP-RIE etching system will be available within the next 6 months. All three positions are time limited preliminary to 2 years with the possibility to extend the contract by another 2 years. Salary and benefits are commensurate with those of public service organisations.
Closing date for above positions is preliminary scheduled to Dec. 15, 2007.
For further information :
Prof. Dr. Johann Peter Reithmaier
Adresse Heinrich-Plett- Str. 40
Ort Kassel Postleitzahl 34132
Telefon +49-561-804- 4430
E-Mail jpreith@uni- kassel.de
URL http://www.ina. uni-kassel. de/TP/en
Kassel Firma/Institution
University of Kassel Land Germany
Position:
PhD Position eingegangen am:05/11/2007 At the Technological Physics group of the Institute of Nanostructure Technologies and Analytics (INA) of the University of Kassel, Germany, there are three Ph.D. positions open on topics related to self-assembled growth of III-V quantum dot structures (nanomaterials) and optoelectronic device development based on nanostructure processing (nanophotonics) .
The resources at INA include 400 sqm clean room facilities with semiconductor process technology and about 400 sqm additional laboratory space. For the above mentioned topics a double chamber molecular beam epitaxy (Veeco Gen II) is available. One chamber is currently dedicated for GaAs based and the other for InP-based expitaxy, respectively. A new ICP reactive ion etcher will be installed beginning of next year.
For optical material characterization there is access to low-temperature PL and transmission measurements as well as to device charaterization set-ups. 1 Ph.D. position (position number 9164) for III/V epitaxy mainly focussing on self-assembly techniques of InAs quantum dots on materials lattice matched to InP. The major goal here is to investigate and optimise the formation process and optical properties of quantum dots emitting in the wavelength range of 1.55 µm.
These nanoscaled structures should be also applied to optolectronic devices, like lasers or amplifiers, with very unique properties. 1 Ph.D. position (position number 9174) for III/V epitaxy mainly focussing on self-assembly techniques of III-V quantum dots on silicon. Here, basic growth studies should be performed to establish a fabrication technology for efficient light emitting material on silicon.
For this purpose, also silicon process technology can be applied, e.g., for pre-patterning of surfaces, etc. The growth should be performed in an InP growth chamber where an additional Si source will be installed. 1 Ph.D. position (position number 9175) for the development of new optoelectronic devices based on nanostructured semiconductors.
Beside device characterization, this includes also the development of etching processes to realise high aspect ratio III/V nanostructures for new nanophotonic devices, e.g., ultra high-speed multi-section quantum dot lasers or single photon emitters. For this purpose a new ICP-RIE etching system will be available within the next 6 months. All three positions are time limited preliminary to 2 years with the possibility to extend the contract by another 2 years. Salary and benefits are commensurate with those of public service organisations.
Closing date for above positions is preliminary scheduled to Dec. 15, 2007.
For further information :
Prof. Dr. Johann Peter Reithmaier
Adresse Heinrich-Plett- Str. 40
Ort Kassel Postleitzahl 34132
Telefon +49-561-804- 4430
E-Mail jpreith@uni- kassel.de
URL http://www.ina. uni-kassel. de/TP/en
